| PART |
Description |
Maker |
| WED3DG6419V-D2 WED3DG6419V10D2 WED3DG6419V7D2 WED3 |
128MB - 16Mx64 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| W3DG6416V7D2 W3DG6416V75D2 W3DG6416V10D2 W3DG6416V |
128MB-16Mx64 SDRAM UNBUFFERED
|
http://
WEDC[White Electronic Designs Corporation]
|
| NT128S64VH4A0GM0-7K |
128Mb: 16Mx64 SDRAM SODIMM based 16Mx16, 4bands, 8K refresh, 3.3V synchronous DRAMs with SPD
|
NANYA
|
| HYS64D16000 HYS64D16000HDL-6-C HYS64D32020HDL-6-C |
DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank; Available 2Q04
200-Pin Small Outline Dual-In-Line Memory Modules
|
INFINEON[Infineon Technologies AG]
|
| M464S1724DTS-C1H M464S1724DTS-L7C M464S1724DTS M46 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新，3.3V的同步DRAM的社民党
16Mx64 SDRAM SODIMM based on 8Mx16 / 4Banks /4K Refresh / 3.3V Synchronous DRAMs with SPD
16Mx64 SDRAM SODIMM based on 8Mx164Banks4K Refresh3.3V Synchronous DRAMs with SPD
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HYS72V32301GR-7.5 HYS72V64300GR-7.5 HYS72V16300GR- |
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块)
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块)
3.3V 1GB SDRAM Module(3.3V 1GSDRAM 模块)
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块) 3.3 256MB的内存模块（3.3 256M位内存模块）
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块) 3.3 128MB的内存模块（3.3V28兆位内存模块
|
SIEMENS AG
|
| GMM26416233ENTG |
16Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl
|
Hynix Semiconductor
|
| M464S1724CT1-L1L_C1L M464S1724CT1-L1H_C1H M464S172 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Data sheet
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存4Banks4K的刷新，3.3V的同步DRAM的社民党
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新，3.3V的同步DRAM的社民党
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| KMM366S1623AT-G8 KMM366S1623AT KMM366S1623AT-G0 KM |
16M x 64 SDRAM DIMM
16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HY5V26CL/SF-HI HY5V26CL/SF-KI HY5V26CL/SF-SI HY5V2 |
SDRAM - 128Mb
|
Hynix Semiconductor
|
